发明名称 |
Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
摘要 |
A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
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申请公布号 |
US2010035436(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090461319 |
申请日期 |
2009.08.07 |
申请人 |
KIM GO-UN;LEE HYO-SAN;PARK MYUNG-KOOK;YANG HO-SEOK;HAN JEONG-NAM;HONG CHANG-KI |
发明人 |
KIM GO-UN;LEE HYO-SAN;PARK MYUNG-KOOK;YANG HO-SEOK;HAN JEONG-NAM;HONG CHANG-KI |
分类号 |
H01L21/306;C09K13/08 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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