SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device of a low source resistance, which can perform an excellent enhancement action for a high-voltage action.  Over a substrate (101), there are formed a buffer layer (102) made of a first GaN-family semiconductor, a carrier transit layer (103) made of a second GaN-family semiconductor, a carrier feed layer (104) made of a third GaN-family semiconductor, a two-dimensional electron gas dissolving layer (105), which is made of a fourth GaN-family semiconductor and raises the conduction band of the carrier feed layer to the side of a vacuum-order side so that a two-dimensional electron gas may not accumulate in the carrier transit layer, and a low-resistance layer (106) made of a fifth GaN-family semiconductor.  The two-dimensional electron gas dissolving layer (105) and the low-resistance layer (106) are removed by recess-etching at the areas between a drain electrode and a gate electrode and at the areas below a lower portion of the gate electrode and a drain electrode (108).  Then, the remaining side faces of the two-dimensional electron gas dissolving layer (105) and the low-resistance layer (106) are so formed as not to be normal to the surfaces before the removal but to be tapered therefrom.  A source electrode (107) is formed in contact with the low-resistance layer (106), and the drain electrode (108) is formed in contact with the carrier feed layer (104).  Next, a gate-insulating film (109) is formed to form a gate electrode (110).  Finally, a protection film (111) is formed to manufacture a field effect transistor.