发明名称 |
HIGH VOLTAGE BIPOLAR TRANSISTOR AND METHOD OF FABRICATION |
摘要 |
High voltage bipolar transistors built with a BiCMOS process sequence exhibit reduced gain at high current densities due to the Kirk effect. Threshold current density for the onset of the Kirk effect is reduced by the lower doping density required for high voltage operation. The widened base region at high collector current densities due to the Kirk effect extends laterally into a region with a high density of recombination sites, resulting in an increase in base current and drop in the gain. The instant invention provides a bipolar transistor in an IC with an extended unsilicided base extrinsic region in a configuration that does not significantly increase a base-emitter capacitance. Lateral extension of the base extrinsic region may be accomplished using a silicide block layer, or an extended region of the emitter-base dielectric layer. A method of fabricating an IC with the inventive bipolar transistor is also disclosed.
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申请公布号 |
US2010032804(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090537246 |
申请日期 |
2009.08.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BALSTER SCOTT GERARD;YASUDA HIROSHI;STEINMANN PHILIPP;EL-KAREH BADIH |
分类号 |
H01L21/331;H01L29/73 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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