发明名称 |
III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer |
摘要 |
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
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申请公布号 |
US2010032718(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080189562 |
申请日期 |
2008.08.11 |
申请人 |
YU CHIA-LIN;CHEN DING-YUAN;YU CHEN-HUA;CHIOU WEN-CHIH |
发明人 |
YU CHIA-LIN;CHEN DING-YUAN;YU CHEN-HUA;CHIOU WEN-CHIH |
分类号 |
H01L33/00;H01L29/20 |
主分类号 |
H01L33/00 |
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