发明名称 |
ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS |
摘要 |
A method for fabricating substantially relaxed SiGe alloy layers with a reduced planar defect density is disclosed The method of the present invention includes forming a strained Ge-containing layer on a surface of a Si-containing substrate; implanting ions at or below the Ge-containing layer/Si-containing substrate interface and heating to form a substantially relaxed SiGe alloy layer that has a reduced planar defect density. A substantially relaxed SiGe-on-insulator substrate material having a SiGe layer with a reduced planar defect density as well as heterostructures containing the same are also provided.
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申请公布号 |
US2010032684(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090539248 |
申请日期 |
2009.08.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHEN HUAJIE;FOGEL KEITH E.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
分类号 |
H01L29/267;H01L29/161;H01L29/165 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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