| 摘要 |
<p>Provided is a silicon wafer manufacturing method by which oxygen concentration of a surface layer can be kept at a predetermined level or higher, while more effectively promoting generation of a defect-free layer. Thus, strength of the wafer surface layer can be improved compared with normal annealed products, while ensuring the COP-free zone. In the method for manufacturing a silicon wafer having nitrogen and oxygen added thereto, a silicon single crystal having nitrogen added thereto is grown by a Czochralski method, a silicon single crystal wafer is obtained by slicing the grown silicon single crystal, and heat treatment is performed to the sliced silicon single crystal wafer under atmosphere containing at least hydrogen gas or an inert gas. Then, the heat-treated silicon single crystal wafer is polished, and a surface layer which is obtained by heat treatment and has COP defects removed therefrom is polished until the topmost surface has a predetermined oxygen concentration.</p> |
