发明名称 |
METHOD FOR PATTERNING MATERIAL LAYER |
摘要 |
The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer. The material layer has a first hard mask layer and a second hard mask layer successively formed thereon. Then, the second hard mask layer is patterned to form a plurality of openings therein. A patterned photoresist layer is formed to cover the second hard mask layer and the patterned photoresist layer exposes a portion of the openings. The first hard mask layer with the patterned photoresist layer and the patterned second hard mask layer together as a mask. Then, the patterned photoresist layer and the patterned second hard mask layer are removed. The material layer is patterned with the patterned first hard mask layer as a mask.
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申请公布号 |
US2010035191(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080265997 |
申请日期 |
2008.11.06 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG CHIH-HAO;WU TZONG-HSIEN;YANG CHIN-CHENG;YANG TIEN-CHU |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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