| 摘要 |
An electrolytic processing apparatus, prior to carrying out plating directly on, e.g., a ruthenium film of a substrate using the ruthenium film as a seed layer, can securely remove a passive layer formed on a surface of the ruthenium film even when the substrate is a large-sized high-resistance substrate, such as a 300-mm wafer, thereby reducing the terminal effect during the subsequent plating, improving the quality of a plated film and enabling filling of a void-free plated film into a fine interconnect pattern. The electrolytic processing apparatus includes: an anode disposed opposite a seed layer of a noble metal or a high-melting metal, formed on a substrate; a porous body impregnated with an electrolytic solution, disposed in a space, filled with the electrolytic solution, between the substrate and the anode; and a control section for controlling an electric field on a surface of the seed layer so that a reduction reaction takes place in the seed layer, thereby electrolytically and electrochemically removing a passive layer formed in the surface of the seed layer.
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