GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM

摘要

Provided is a GaN semiconductor optical element (11a) wherein the main surface (13a) of a substrate (13) is tilted at a tilt angle within a range of 63 degrees or more but less than 80 degrees in the m-axis direction of a first GaN semiconductor, from a surface which orthogonally intersects with the reference axis (Cx) extending along the c-axis of the first GaN semiconductor.  A GaN semiconductor epitaxial region (15) is arranged on the main surface (13a).  On the GaN semiconductor epitaxial region (15), an active layer (17) is arranged.  The active layer (17) includes at least one semiconductor epitaxial layer (19).  The semiconductor epitaxial layer (19) is composed of InGaN.  The film thickness direction of the semiconductor epitaxial layer (19) is tilted from the reference axis (Cx).  The reference axis (Cx) is in the direction of the [0001] axis of the first GaN semiconductor.  Thus, in the GaN semiconductor light emitting element, deterioration of light emitting characteristics in the active layer due to In segregation is suppressed.