EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCTION THEREOF

摘要

Disclosed is an epitaxial silicon wafer.  Also disclosed is a method for producing the epitaxial silicon wafer.  The epitaxial silicon wafer is characterized by comprising a silicon monocrystal base plate (1) and a silicon epitaxial layer (3) arranged on the main surface of the base plate (1), and is also characterized by having at least a first layer (2) containing a non-carrier dopant and a second layer (4) containing a non-carrier dopant formed on the silicon monocrystal base plate and the silicon epitaxial layer.