| 摘要 |
A method for fabricating a CMOS-compatible MEMS device is disclosed. In particular, disclosed is a method of ordering the acts in the fabrication process of the two device types such that one device type will not be damaged by the fabrication process of the other device type. One aspect of the method involves first depositing a masking layer over a portion of a substrate layer to isolate areas for the formation of a second device type. The first device type is then fabricated on the unmasked portion of the substrate. A first device is then protected by depositing a masking layer over the first device. Next, a portion of the masking layer over the substrate is removed to expose areas to form a second device type. The second device type is then fabricated on the unmasked portion of the substrate. Finally, the masking layer over the first device type is removed.
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