发明名称 |
Configuration and method of manufacturing the one-time programmable (OTP) memory cells |
摘要 |
This invention discloses a method for manufacturing a one-time programmable (OTP) memory includes a first and second MOS transistors connected in parallel and controlled by a common gate formed with a single polysilicon stripe. The method further comprises a step of implanting a drift region in a substrate region below a drain and source of the first and second MOS transistors counter doping a lightly dope drain (LDD) encompassing and surrounding a drain and a source of the first MOS transistor having a different threshold voltage than the second MOS transistor not reached by the drift region.
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申请公布号 |
US2010035397(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090587609 |
申请日期 |
2009.10.09 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
MALLIKARARJUNASWAMY SHEKAR |
分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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