发明名称 |
Nano-magnetic memory device and method of manufacturing the device |
摘要 |
A nano-magnetic memory device capable of writing/reading multi data in the nano-magnetic memory cell by controlling an amount of an induced current which is formed after a magnetic nanodot is perturbed and rearranged according to a word line current flowing from the first electrode through a nanowire of the nano-magnetic memory device to the second electrode. Consequently, a size of the memory device is reduced and a density of the memory device may be improved by providing a simplified nano-magnetic memory device of which a cell size is smaller.
|
申请公布号 |
US2010032737(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20060604679 |
申请日期 |
2006.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL KWANG SOO;CHOI JAE YOUNG;YI DONG KEE;CHOI SEONG JAE |
分类号 |
H01L29/82;H01L21/00 |
主分类号 |
H01L29/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|