发明名称 |
QUANTUM DOT INFRARED PHOTODETECTOR |
摘要 |
A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots.
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申请公布号 |
US2010032651(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090534220 |
申请日期 |
2009.08.03 |
申请人 |
TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENSE OF JAPAN;FUJITSU LIMITED |
发明人 |
OKAMURA TOSHIHIRO;NAGASHIMA MITSUHIRO;KIBE MICHIYA;SUZUKI RYO;UCHIYAMA YASUHITO;NISHINO HIRONORI |
分类号 |
H01L31/101 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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