发明名称 |
Method of producing a topology-optimized electrode for a resonator in thin-film technology |
摘要 |
In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.
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申请公布号 |
US7657983(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20040888429 |
申请日期 |
2004.07.09 |
申请人 |
AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. |
发明人 |
AIGNER ROBERT;ELBRECHT LUEDER;MARKSTEINER STEPHAN;NESSLER WINFRIED |
分类号 |
H01L41/22;H03H3/02;H01L41/083;H01L41/09;H03H9/17 |
主分类号 |
H01L41/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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