发明名称 Method of producing a topology-optimized electrode for a resonator in thin-film technology
摘要 In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.
申请公布号 US7657983(B2) 申请公布日期 2010.02.09
申请号 US20040888429 申请日期 2004.07.09
申请人 AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. 发明人 AIGNER ROBERT;ELBRECHT LUEDER;MARKSTEINER STEPHAN;NESSLER WINFRIED
分类号 H01L41/22;H03H3/02;H01L41/083;H01L41/09;H03H9/17 主分类号 H01L41/22
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