发明名称 |
Process for manufacturing semiconductor integrated circuit device |
摘要 |
In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
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申请公布号 |
US7659201(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20080127564 |
申请日期 |
2008.05.27 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
OHASHI NAOFUMI;NOGUCHI JUNJI;IMAI TOSHINORI;YAMAGUCHI HIZURU;OWADA NOBUO;HINODE KENJI;HOMMA YOSHIO;KONDO SEIICHI |
分类号 |
H01L21/3205;H01L21/44;G09G5/399;H01L21/02;H01L21/302;H01L21/304;H01L21/321;H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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