| 摘要 |
A high-function bonding wire excellent in the surface properties of the wire, the linearity of a loop, the stability of the loop height, and the stability of the bonded shape of the wire and adapted to semiconductor mounting techniques such as thinning of the wires, narrowing of pitches, lengthening of the span, and three-dimensional mounting. The bonding wire for semiconductor devices comprises a core made of a conductive metal and a skin layer whose main component is a metal having a face-centered cubic crystal structure and different from the metal of the core and which is formed on the core. The bonding wire is characterized in that the proportion of the orientation to all the crystal orientations in the length direction in the surface of the skin layer is 50% or more. |
