| 摘要 |
PURPOSE: A semiconductor memory device including a control circuit is provided to reduce the number of a transistor by including a control circuit for selectively driving a wiring. CONSTITUTION: A memory cell serially connects a rectifier element and a variable resistor element. The memory cell array(MA) includes memory cells are arranged in the intersection between a first and a second wiring. A control circuit selectively drives the first and the second wiring. The control circuit applies a predetermined electric potential difference to a selection memory cell(MC) located in the intersection between the first and the second wiring. The control circuit applies a first voltage to the first wiring. The control circuit applies the second voltage to the second wiring. The control circuit transforms, at least one, a state of a wiring to a floating state among first wirings.
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