发明名称 |
Methods for etching layers within a MEMS device to achieve a tapered edge |
摘要 |
Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
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申请公布号 |
US7660058(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20060506770 |
申请日期 |
2006.08.18 |
申请人 |
QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
QIU CHENGBIN;SASAGAWA TERUO;TUNG MING-HAU;WANG CHUN-MING;ZEE STEPHEN |
分类号 |
H01L21/302;B44C1/22 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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