发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)>=400.
申请公布号 US7659635(B2) 申请公布日期 2010.02.09
申请号 US20080204394 申请日期 2008.09.04
申请人 RENESAS TECHNOLOGY CORP. 发明人 KURAYA HIDETOSHI;ARAKAWA HIDEYUKI;AGA FUMIAKI
分类号 H01L29/40;B23K31/00;C22C5/02 主分类号 H01L29/40
代理机构 代理人
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