发明名称 Method for fabricating a solid electrolyte memory device and solid electrolyte memory device
摘要 A method for fabricating a solid electrolyte memory device comprises a plurality of solid electrolyte memory cells, the solid electrolyte memory cells sharing a common continuous solid electrolyte layer comprising solid electrolyte cell areas and solid electrolyte inter-cell areas, the method comprising the process of introducing mobile ion solubility reducing material or mobile ion mobility reducing material into the solid electrolyte inter-cell areas.
申请公布号 US7658773(B2) 申请公布日期 2010.02.09
申请号 US20060541391 申请日期 2006.09.29
申请人 QIMONDA AG;ALTIS SEMICONDUCTOR, SNC 发明人 PINNOW CAY-UWE
分类号 H01G9/00;H01L21/20 主分类号 H01G9/00
代理机构 代理人
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