| 发明名称 |
Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate |
| 摘要 |
This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.
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| 申请公布号 |
US7659167(B2) |
申请公布日期 |
2010.02.09 |
| 申请号 |
US20060422059 |
申请日期 |
2006.06.02 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HAN TZUNG-TING;SU CHIN-TA;YANG YUN-CHI |
| 分类号 |
H01L21/336;H01L21/205;H01L21/28;H01L29/423;H01L29/49 |
主分类号 |
H01L21/336 |
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