发明名称 Method and unit for verifying initial state of non-volatile memory device
摘要 A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
申请公布号 US7660163(B2) 申请公布日期 2010.02.09
申请号 US20050208742 申请日期 2005.08.23
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 AHN SE-JIN
分类号 G11C16/06 主分类号 G11C16/06
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