发明名称 |
Semiconductor device including a barrier metal film |
摘要 |
A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
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申请公布号 |
US7659626(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20050578003 |
申请日期 |
2005.05.20 |
申请人 |
PANASONIC CORPORATION |
发明人 |
NAKAGAWA HIDEO;IKEDA ATSUSHI;AOI NOBUO |
分类号 |
H01L23/52;H01L21/3205;H01L21/4763;H01L21/768;H01L23/48;H01L23/532 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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