发明名称 |
Method for forming silicon thin-film on flexible metal substrate |
摘要 |
Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
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申请公布号 |
US7659185(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20060570285 |
申请日期 |
2006.02.27 |
申请人 |
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发明人 |
JANG JIN;CHOI JONG-HYUN;KIM SEUNG-SOO;OH JAE-HWAN;CHON JUN-HYUK |
分类号 |
H01L21/20;H01L21/77;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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