| 摘要 |
Pure silicon is deposited, e.g. from a gas, on to a rod of silicon containing a doping agent so as substantially to increase the cross-sectional area of the rod whereafter the rod is zone-melted, and optionally stretched. The process of deposition, zone-melting, and stretching may be repeated. The resistivity of the silicon may increase from 0,1 to 100 ohm-cm. p-doping agents specified are aluminium, boron, and gallium. n-doping agents specified are antimony, arsenic, and phosphorus. To effect doping, the rod may be rubbed with boron, or a filament of boron-containing glass applied thereto, and the rod then zone-melted. |
