发明名称 |
Removal of silicon oxycarbide from substrates |
摘要 |
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.
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申请公布号 |
US7659206(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20060359301 |
申请日期 |
2006.02.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
VEPA KRISHNA;BHATNAGAR YASHRAJ;RAYANDAYAN RONALD;BALAGANI VENKATA |
分类号 |
H01L21/3105;H01L21/311;H01L21/316 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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