发明名称 |
METHOD AND APPARATUS FOR ETCHING AND DEPOSITION USING MICRO-PLASMAS |
摘要 |
Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in par-allel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a dielectric layer applied to the substrate. A selected pressure of the gas in the region of the electrode and the substrate is established, and a voltage is applied between the plasma generating electrode and the substrate or a second electrode to ignite a plasma in the region between the plasma generating electrode and the substrate for a selected period of time. This plasma is limited to the region of the plasma generating electrode adjacent to the exposed surface so that the substrate is plasma treated in a desired pattern.
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申请公布号 |
CA2387432(C) |
申请公布日期 |
2010.02.09 |
申请号 |
CA20002387432 |
申请日期 |
2000.10.11 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
GIANCHANDANI, YOGESH B.;WILSON, CHESTER G. |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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