发明名称 Semiconductor memory for disconnecting a bit line from a sense amplifier in a standby period and memory system including the semiconductor memory
摘要 Each memory block has a plurality of memory cells, and word lines and bit lines connected to the memory cells. Precharge switches connect the bit lines to a precharge line. A switch control circuit controls an operation of the precharge switches and sets a cutoff function that turns off connection switches in a standby period in which no access operation of the memory cells is performed. Since connections of the bit lines and the precharge switch and those of the bit lines and the sense amplifier are cut off in the standby period, if a short circuit failure is present between a word line and a bit line, a leak current can be prevented from flowing from the word line to a precharge voltage line and so on.
申请公布号 US7660184(B2) 申请公布日期 2010.02.09
申请号 US20070878354 申请日期 2007.07.24
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 KOBAYASHI HIROYUKI
分类号 G11C8/00 主分类号 G11C8/00
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