摘要 |
A solid-state imaging device of the present invention includes: photodiodes having a vertical overflow drain structure; vertical shift registers for temporarily storing signals transferred from the photodiodes; and a horizontal shift register for storing and horizontally transferring signals transferred from the vertical shift registers, wherein a phiSUB pulse is applied to the substrate, the phiSUB pulse having a larger pulse width than a phiV pulse applied to the gate electrode of each vertical shift register. Thus, it is possible to sweep out smear charges from the photodiode toward the substrate.
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