PURPOSE: A manufacturing method of a germanium nano crystalline is provided to secure the structural stability by forming a germanium nitride barrier in nano units around the germanium nano crystalline. CONSTITUTION: A manufacturing method of a germanium nano crystalline(500) comprises the steps of: forming a germanium nitride thin film by a ionized nitrogen gas on a germanium board(100); and forming the germanium nano crystalline surrounded by the germanium nitride film through post-heating the germanium nitride thin film. The ionized nitrogen gas is obtained by direct current ion gun in the form of a hot filament. The ionized nitrogen gas is usually in the N2+ status. The step of forming germanium nitride thin film operates in the room temperature. The step forming germanium nitride thin film operates in the pressure of 0.5×10-6-10×10-6 torr.
申请公布号
KR20100013119(A)
申请公布日期
2010.02.09
申请号
KR20080074644
申请日期
2008.07.30
申请人
POSTECH ACADEMY-INDUSTRY FOUNDATION
发明人
JUNG, MIN CHERL;SHIN, HYUN JOON;PARK, YONG SUP;LEE, YOUNG MI