发明名称 FABRICATION METHOD OF NANOCRYSTALLINE-GERMANIUM
摘要 PURPOSE: A manufacturing method of a germanium nano crystalline is provided to secure the structural stability by forming a germanium nitride barrier in nano units around the germanium nano crystalline. CONSTITUTION: A manufacturing method of a germanium nano crystalline(500) comprises the steps of: forming a germanium nitride thin film by a ionized nitrogen gas on a germanium board(100); and forming the germanium nano crystalline surrounded by the germanium nitride film through post-heating the germanium nitride thin film. The ionized nitrogen gas is obtained by direct current ion gun in the form of a hot filament. The ionized nitrogen gas is usually in the N2+ status. The step of forming germanium nitride thin film operates in the room temperature. The step forming germanium nitride thin film operates in the pressure of 0.5×10-6-10×10-6 torr.
申请公布号 KR20100013119(A) 申请公布日期 2010.02.09
申请号 KR20080074644 申请日期 2008.07.30
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 JUNG, MIN CHERL;SHIN, HYUN JOON;PARK, YONG SUP;LEE, YOUNG MI
分类号 B82B3/00 主分类号 B82B3/00
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