| 发明名称 |
A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to form a desired film pattern at a desired position by using a first mask pattern having low wetness with a second mask pattern having high wetness. CONSTITUTION: A first film(102) is formed on a substrate(101). A first mask pattern(103) with low wetness is formed on the substrate by discharging a droplet. The first mask pattern forms gate insulating layer with high wetness on a predetermined region. The semiconductor layer is formed on the gate insulating layer. Droplet contain gallium-doped zinc oxide added with gallium. Droplet contain indium-tin oxide.</p> |
| 申请公布号 |
KR20100013297(A) |
申请公布日期 |
2010.02.09 |
| 申请号 |
KR20090126617 |
申请日期 |
2009.12.18 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MAEKAWA SHINJI;FUJII GEN;SHIROGUCHI HIROKO;MORISUE MASAFUMI |
| 分类号 |
H01L21/288;H01L21/469;B05D1/12;B05D1/32;G02B5/20;G03F7/00;H01L21/02;H01L29/78 |
主分类号 |
H01L21/288 |
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