NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAM USING ECC

摘要

PURPOSE: A non-volatile memory device using ECC(Error Check Correction) and a program method thereof are provided to reduce a program time by closing a program operation if the number of error bits is a possible level to pass the ECC after reading the data of a memory cell according to the number of a ECC correction possible. CONSTITUTION: Selected memory cells are programmed. Programmed memory cells are determined if a program fail occurred. If a present program loop is a maximum program loop, the number of the program failed memory cells is determined if the number is a possible level to conduct a ECC correction(218). If the number of the program failed memory cells is lower than the number of the ECC correction possible, the data of the program failed memory cell is decoded(220). The number of error bits is determined if the ECC operation can be passed(213). If the ECC pass is possible as to the program failed memory cells, a program operation is closed.