| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to minimize a dark current source and prevent the decline of the sensitivity of the dark current by forming a flowing path for photo charge. CONSTITUTION: A readout circuit(120) is formed on a first substrate. An interlayer dielectric layer(160) is formed in the first substrate. The wiring is formed on an interlayer dielectric layer and is electrically connected to the readout circuit. A CuInGaSe 2(CIGS) image sensing device is formed on the wiring. The CIGS image sensing device senses a broadband image sensing between 400-1300nm. An electric bonding domain(140) is formed on the first substrate and it is electrically connected to the readout circuit. The electrical bonding domain comprises a first conductive ion implantation region(143) formed on the first substrate.
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