| 摘要 |
<p>PURPOSE: A method of fabricating semiconductor apparatus is provided to prevent the restriction of the channel depth of the saddle type pin transistor by forming the mask of wider width. CONSTITUTION: The sacrificing layer(504) is formed on the lower semiconductor substrate(502). The first silicon film(506) is formed on the sacrificing layer. The silicon connecting area is defined by the etching of the sacrificing layer and the first silicon film. The second silicon film is formed on the first silicon film and lower semiconductor substrate.</p> |
