METHOD OF FORMING CONDUCTIVE LINE OF SEMICONDUCTOR DEVICE USING CARBON NANOTUBE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

摘要

PURPOSE: A semiconductor device is provided to manufacture a high integration semiconductor by forming a contact wiring connecting two electrodes with carbon nanotube. CONSTITUTION: A catalyst metal layer is formed on the surface of an electrode(120) of a semiconductor device. An insulating layer(130) is formed on the catalyst metal layer. A contact hole(132) exposing a part of the catalyst metal layer is formed. The gas including the carbon is implanted on the catalyst metal layer through a contact hole. The carbon nanotube(140) is grow up from catalyst metal layer and a wiring is formed.