| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to prevent a dark current at a pixel interface by forming a p+ layer at the pixel interface thinly and locally performing laser annealing. CONSTITUTION: A readout circuit is formed in a first substrate. An interlayer dielectric layer(160) is formed in a first substrate. A wiring is electrically connected to the readout circuit and is formed in the interlayer dielectric layer. An image sensing device(210) is formed in the wiring. A trench is formed at the edge of a pixel of the image sensing device. A second conductive type ion implantation region(230) is annealed at the side of the trench. An element isolation region(240) is formed in the trench.
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