| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to improve the quality of an image sensor by preventing a transparent electrode and a photo-diode from being exited. CONSTITUTION: A readout circuit is formed on a semiconductor substrate(100). A wiring(150) and an interlayer dielectric layer are formed on the semiconductor substrate. An image sensor unit(200) is formed on the interlayer dielectric layer and is electrically connected to the readout circuit. A transparent electrode(220) is formed on the image sensing device. A via trench passes through a transparent electrode layer and it exposes the inside of the image sensing device. A anchor plug(245) is formed inside the via trench.
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