| 摘要 |
PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to prevent the diffusion between second dielectric film and the first dielectric film by forming a third dielectric film for blocking the diffusion. CONSTITUTION: In a non-volatile memory device, a first dielectric film(330) and a second dielectric film(350) are interposed between a floating gate electrode and a control gate. A third dielectric film is interposed between a first dielectric film and a second dielectric film to prevent the diffusion between them. The third dielectric film has a dielectric constant smaller than the second dielectric film. The first dielectric film is formed with a silicon oxide film, and second dielectric film is formed with a metal oxide layer.
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