SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize the surface detachment between an insulating layer and a tungsten film and to improve seam of the tungsten film. CONSTITUTION: An insulating layer(120) comprises trench on a semiconductor substrate. A metal wiring(160) is formed in the trench into a laminating structure of a CVD tungsten film(150) formed on a PVD tungsten film and a PVD tungsten film(140) formed according to the sidewall and bottom surface of the trench. The insulating layer has compression stress higher than tensile stress of the CVD tungsten film.