发明名称 PLASMA PROCESSING APPARATUS AND METHOD FOR USING PLASMA PROCESSING APPARATUS
摘要 [PROBLEMS] To suppress propagation of a conductor surface wave. [MEANS FOR SOLVING PROBLEMS] A plasma processing apparatus (10) is provided with a processing container (100) formed of metal; a microwave source (900) for outputting a microwave; a dielectric plate (305) which faces the inner wall of the processing container (100) and transmits the microwave outputted from the microwave source (900) into the processing conainer; and a groove (300a) which functions as a propagation disturbing section arranged on the inner surface of the processing container. When a low frequency microwave is supplied, propagation of a conductor surface wave is suppressed by the groove (300a).
申请公布号 KR20100012868(A) 申请公布日期 2010.02.08
申请号 KR20097024342 申请日期 2008.06.11
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 HIRAYAMA MASAKI;OHMI TADAHIRO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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