发明名称 |
PLASMA PROCESSING APPARATUS AND METHOD FOR USING PLASMA PROCESSING APPARATUS |
摘要 |
[PROBLEMS] To suppress propagation of a conductor surface wave. [MEANS FOR SOLVING PROBLEMS] A plasma processing apparatus (10) is provided with a processing container (100) formed of metal; a microwave source (900) for outputting a microwave; a dielectric plate (305) which faces the inner wall of the processing container (100) and transmits the microwave outputted from the microwave source (900) into the processing conainer; and a groove (300a) which functions as a propagation disturbing section arranged on the inner surface of the processing container. When a low frequency microwave is supplied, propagation of a conductor surface wave is suppressed by the groove (300a).
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申请公布号 |
KR20100012868(A) |
申请公布日期 |
2010.02.08 |
申请号 |
KR20097024342 |
申请日期 |
2008.06.11 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY |
发明人 |
HIRAYAMA MASAKI;OHMI TADAHIRO |
分类号 |
H01L21/3065;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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