| 摘要 |
This invention provides an insulating film material suitable for the formation of a low-permittivity and high-strength insulating film, a multilayer wiring board, which can realize a reduced parasitic capacitance between wirings, and a process for producing the multilayer wiring board, and a high-speed and highly reliable semiconductor device and a process for producing the semiconductor device. The insulating film material is characterized by comprising at least a polycarbosilane compound having a structure represented by the following structural formula (1). [Chemical formula 25] structural formula (1) wherein Rs, which may be the same or different in repetition of n times, and represent any of a hydrocarbon having 1 to 4 carbon atoms and aromatic hydrocarbons; Rs, which may be the same or different in repetition of n times, and represent any of a hydrocarbon having 1 to 4 carbon atoms and aromatic hydrocarbons; and n is an integer of 5 to 5,000. |
