| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element which has a good forward voltage and little smearing near the interface between a p-type second current diffusion layer and a p-type first current diffusion layer, and also to provide a fabrication method therefor. <P>SOLUTION: The method of fabricating a light emitting element includes steps of: epitaxially growing a four-element light emitting layer consisting of AlGaInP on a GaAs substrate; epitaxially growing a p-type first current diffusion layer on the four-element light emitting layer thus grown by metal organic vapor phase epitaxy; and epitaxially growing a p-type second current diffusion layer on the p-type first current diffusion layer thus grown by hydride vapor phase epitaxy. The method is further includes at least a step of heat treating the substrate while feeding hydrogen into an HVPE furnace at a linear velocity of 12 (m/min) or more after the step of epitaxially growing a p-type first current diffusion layer by metal organic vapor phase epitaxy and before the step of epitaxially growing a p-type second current diffusion layer by hydride vapor phase epitaxy. <P>COPYRIGHT: (C)2010,JPO&INPIT |
