发明名称 |
TUNABLE WAVELENGTH LIGHT EMITTING DIODE |
摘要 |
A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.
|
申请公布号 |
US2010025653(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090440330 |
申请日期 |
2009.06.25 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
SOH CHEW BENG;CHUA SOO JIN;HARTONO HARYONO |
分类号 |
H01L33/00;H01L21/20;H01L33/06;H01L33/08 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|