| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel wet-etching method of a ZnO-based semiconductor structure. Ž<P>SOLUTION: This processing method of a semiconductor structure includes (a) a process for preparing a ZnO-based semiconductor structure having a +C face as the surface thereof, (b) a process for etching the surface of the ZnO-based semiconductor structure with a mixed solution of ammonium fluoride and hydrofluoric acid, and (c) a process for etching the surface of the ZnO-based semiconductor structure with a mixed solution of hydrochloric acid and nitric acid after the process (b). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
