发明名称 |
Method and Apparatus for Forming a High Quality Low Temperature Silicon Nitride Layer |
摘要 |
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
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申请公布号 |
US2010029094(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090577922 |
申请日期 |
2009.10.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG SHULIN;SANCHEZ ERROL ANTONIO;CHEN AIHUA |
分类号 |
H01L21/31;C23C16/34;C23C16/44;C23C16/452;C23C16/455;C23C16/56;H01L21/00;H01L21/30;H01L21/314;H01L21/318;H01L21/336 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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