| 摘要 |
System for depositing a thin film over a substrate comprise a reaction space, a substrate support member configured to permit movement of a substrate in a longitudinal direction, and a plasma-generating apparatus disposed in the reaction space and configured to form plasma-excited species of a vapor phase chemical. The plasma-generating apparatus can comprise a cathode unit having an electrode plate and one or more gas diffuser plates for forming a high-density, linearly-shaped and uniform plasma in a space between the substrate and the cathode unit.
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