| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory circuit free from electromigration in a simple configuration. <P>SOLUTION: In the memory circuit, a bit line is charged, a storage element is selected by a wordline, whether or not to discharge the bit line toward a ground terminal A is determined on the basis of the state of the selected storage element, and the occurrence of discharge is identified by detecting reduction in voltage of the bit line to determine the state of the selected storage element. In the memory circuit, the ground terminal A is charged in advance, and the ground terminal A is gently discharged through a transistor having a large ON resistance when the bit line is discharged. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
