发明名称 |
ANISOTROPIC DRY ETCHING METHOD AND APPARATUS OF COPPER |
摘要 |
PROBLEM TO BE SOLVED: To provide an anisotropic dry etching method of copper capable of performing anisotropic etching to copper without causing corrosion of the copper by halogens. SOLUTION: The anisotropic dry etching method of copper for anisotropically performing dry etching to a copper film formed on a substrate includes: a process for performing anisotropic oxidation treatment to the copper film; and a process for performing dry etching to a copper oxide formed by oxidation treatment using an organic acid without containing any halogens. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010027788(A) |
申请公布日期 |
2010.02.04 |
申请号 |
JP20080186152 |
申请日期 |
2008.07.17 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
MIYOSHI SHUSUKE;GUNJI ISAO;ITO HITOSHI |
分类号 |
H01L21/3213;H01L21/3065;H01L21/316 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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