发明名称 ANISOTROPIC DRY ETCHING METHOD AND APPARATUS OF COPPER
摘要 PROBLEM TO BE SOLVED: To provide an anisotropic dry etching method of copper capable of performing anisotropic etching to copper without causing corrosion of the copper by halogens. SOLUTION: The anisotropic dry etching method of copper for anisotropically performing dry etching to a copper film formed on a substrate includes: a process for performing anisotropic oxidation treatment to the copper film; and a process for performing dry etching to a copper oxide formed by oxidation treatment using an organic acid without containing any halogens. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010027788(A) 申请公布日期 2010.02.04
申请号 JP20080186152 申请日期 2008.07.17
申请人 TOKYO ELECTRON LTD 发明人 MIYOSHI SHUSUKE;GUNJI ISAO;ITO HITOSHI
分类号 H01L21/3213;H01L21/3065;H01L21/316 主分类号 H01L21/3213
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