发明名称 THIN FILM TRANSISITOR ARRAY PANEL AND MANUFACTURING TMETHOD THEREOF
摘要 A thin film transistor array panel according to an embodiment includes: a substrate; a plurality of gate line formed on the substrate; a plurality of first capacitor electrodes formed on the substrate and separated from the gate lines; a plurality of data line intersecting the gate lines; a plurality of thin film transistor connected to the gate lines and the data lines; a plurality of second capacitor electrodes disposed on the first electrode; a plurality of interconnections connected to the second capacitor electrodes and the thin film transistor and disposed symmetrical to the data lines; and a plurality of pixel electrode, each pixel electrode including a first subpixel electrode connected to one of the thin film transistors and a second subpixel electrode connected to one of the first capacitor electrodes.
申请公布号 US2010025689(A1) 申请公布日期 2010.02.04
申请号 US20090572231 申请日期 2009.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE CHANG-HUN;KIM HYUN-WUK;JUNG MEE-HYE;SHIN KYOUNG-JU;CHANG HAK-SUN;UM YOON-SUNG
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项
地址